共晶二元Sn基焊料与Bi_2(Te_(0.9)Se_(0.1))_3基热电材料的界面反应  

Interfacial Reaction Between Eutectic Sn-based Solders and n-type Bismuth Telluride-based Thermoelectric Materials

作　　者：沈丽[1] 徐广臣[1] 赵然[1] 郭福[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100124

出　　处：《金属功能材料》2012年第2期7-11,共5页Metallic Functional Materials

基　　金：国家自然科学基金面上项目(51071006);北京市人事局留学人员科研启动基金资助项目(Q2009012200801)的经费资助

摘　　要：热电元件焊接常用的焊料为铟基焊料和铋基焊料。由于碲化铋材料与低熔点合金焊料之间的浸润性较差,常在碲化铋基热电元件上镀覆镍镀层。本文在大气条件下,不加助焊剂,采用共晶SnBi和SnIn焊料分别对n型热电元件进行了铺展实验及界面显微组织的观察。铺展温度主要选择了210℃和300℃,实验表明300℃界面结合比250℃更好。此外,热电元件表面通过蒸镀仪蒸镀上薄镍层。对含薄镍层的热电元件与不含镍层的热电元件的铺展实验进行对比,得到薄镍镀层可能会增加界面裂纹。The indium-based solders and bismuth-based solders are commonly employed in soldering the thermopile. Since the wettability between bismuth telluride materials and low melting point alloy solders is poor, a nickel layer was employed on the surface of thermoelectric materials. In this study, in the atmospheric environment, the eutectic Sn-Bi and Sn-In solders sprea- ded on the n-type thermoelectric material, respectively, without using soldering flux, the corresponding interfacial microstructures were indentified. The interfacial reaction is more sufficient under 300 ℃ when comparing to that under 210℃. In addition, a thin nickel layer was deposited on the thermoelectric unit by vapor deposition facility. However, a thin Ni-plated layer on thermoelectric materials might induce severe formation of cracks.

关 键 词：封装 热电堆 Bi2(Te0.9Se0.1)3 Sn基焊料 

分 类 号：TB34[一般工业技术—材料科学与工程] O482.6[理学—固体物理]