有机场效应晶体管最新实验研究进展  

Latest Experimental Research Progress on Organic Field-Effect Transistors

作　　者：谢吉鹏[1,2] 马朝柱[1] 杨汀[1] 姚博[1] 彭应全[1,3] 

机构地区：[1]兰州大学物理科学与技术学院微电子研究所,兰州730000 [2]空军大连通信士官学校基础部,辽宁大连116600 [3]兰州大学物理科学与技术学院磁学与磁性材料教育部重点实验室,兰州730000

出　　处：《微纳电子技术》2012年第5期291-301,共11页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(10974074);教育部博士点基金资助项目(20110211110005)

摘　　要：介绍了近两年新报道的有机半导体材料,列举了其场效应性能参数;综述了有机场效应晶体管(OFET)在器件结构上的改进,重点阐述了基于常见有机功能层材料富勒烯及其衍生物、并五苯、聚3-己基噻吩的OFET对栅介质层及有机功能层与电极的界面的改进,讨论了器件结构改进对OFET阈值电压、开关比、载流子迁移率的影响;介绍了衬底温度、退火处理对OF-ET性能的影响。最后,针对有机场效应晶体管研究现状,指出未来研究中应注重开发高迁移率、高薄膜稳定性的有机功能材料和高介电常数、高成膜质量的有机栅介质材料,继续优化器件结构,改进制备工艺以提高器件性能。The new reports of organic semiconductor materials in the past two years are introduced,and the field effect performance parameters are presented.The improvements for device structures of the organic field-effect transistor（OFET） are reviewed,and improvements of gate dielectric layers and interface of organic functional layers and the electrodes by the OFET based on fullerenes and their derivatives,pentacene,poly 3-hexyl thiophene which are common organic functional layer materials are introduced emphatically.The effects of the improvement for device structures on the threshold voltage,on/off ratio and carrier mobility of the OFET are discussed,and the effects of substrate temperature and annealing treatment on the OFET performance are introduced.Finally,the organic functional layer materials with high mobility,high film stability and the organic gate dielectric materials with high dielectric constant,high film quality should be developed in future research.The device structure and the fabrication process will be optimized and improved continually in order to improve the device performance.

关 键 词：有机场效应晶体管(OFET) 有机半导体材料 栅介质层 电极界面 衬底温度 退火处理 

分 类 号：TN386[电子电信—物理电子学]