Ku波段低相噪推-推式VCO单片集成电路  

Low Phase Noise Ku-Band Push-Push VCO MMIC

作　　者：汪江涛[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2012年第6期433-436,共4页Semiconductor Technology

摘　　要：基于InGaP-GaAs HBT工艺设计了一款Ku波段推-推式压控振荡器(VCO)微波单片集成电路(MMIC)。采用改进的虚地反馈法对基本振荡单元的奇偶模进行了分析,用谐波平衡法对相位噪声和输出功率进行了优化设计。用ADS软件完成了原理图和电磁场仿真,用Candence Virtuoso完成了版图设计。此VCO MMIC频率覆盖14.5～15 GHz,在2.2 mm×1.2 mm的面积内集成了变容二极管、谐振电路、负阻产生电路,具有体积小、成本低、相位噪声低等特点。在4.2 V单电源电压下,其静态电流为150 mA,典型输出功率为10 dBm,频偏为100 kHz时的单边带相位噪声为-105 dBc/Hz。The Ku-band HBT technics was presented push-push voltage control oscillator （VCO） MMIC based on InGap-GaAs With the improved virtual ground and feedback theory, even-odd mode of oscillation unit was analyzed. With harmonic balance simulation, the phase noise and power output of the oscillator were optimized. Schematic and electromagnetic （EM） simulation were designed with ADS, and the layout was designed with Candence. The tuning range of the VCO is from 14.5 GHz to 15 GHz. The area of this chip is 2.2 mm × 1.2 mm, which integrates varactor diode, a resonator and negative resistance device. This VCO MMIC uniquely combines the attribute of ultra-small size, low cost, and low phase noise. With a single 4.2 V supply voltage, the static current is 150 mA and the typical power output is 10 dBm. The sigle side band （SSB） phase noise achieves - 105 dBc/Hz at an offset frequency of 100 kHz.

关 键 词：推-推式压控搌荡器 奇偶模 微波单片集成电路 相位噪声 S参数 

分 类 号：TN752[电子电信—电路与系统] TN454