基区不同Ge组分分布的多指SiGe HBT热学特性  

Thermal Characteristics of Multi-Finger SiGe HBTs with Different Ge Profile in Base Region

作　　者：张瑜洁[1] 张万荣 金冬月[1] 陈亮[1] 付强[1] 赵昕[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《半导体技术》2012年第6期437-441,共5页Semiconductor Technology

基　　金：国家自然科学基金项目(60776051;61006044;61006059);模拟集成电路国家重点实验室基金项目(51439010804QT0101);北京市自然科学基金项目(4082007);北京市教委科技发展计划项目(KM200710005015;KM200910005001);北京市人才强教深化计划-服务北京创新人才培养项目(0020005412A001);北京市优秀跨世纪人才基金项目(67002013200301)

摘　　要：基于半导体器件仿真工具SILVACO TCAD,研究了三种常见的基区Ge组分分布(矩形、梯形和三角形)对多指功率SiGe异质结双极型晶体管(HBT)的热学特性的影响。结果表明,基区Ge组分为梯形分布和三角形分布的多指SiGe HBT的增益随温度变化比较平缓,各发射极指的峰值温度明显小于矩形分布的各指峰值温度,器件纵向和表面温度分布也更加均匀,因此,与矩形分布相比,梯形分布和三角形分布的多指SiGe HBT在热学特性上有了很大的改善,电学特性也相对热稳定。在这三种结构中,梯形分布可以更好地兼顾增益特性和热学特性。The effects of three kinds of Ge profile （box, trapezoidal and triangular Ge-profile） in the base region on thermal characteristics of multi-finger SiGe heterojunction bipolar transistors （HBTs） were investigated by using of SILVACO TCAD simulator. It is found that the variation of gain for SiGe HBTs with the trapezoidal or triangular Ge profile in the base region is slower with the increase of temperature and the peak temperature at the each emitter finger is lower than that for multi-finger SiGe HBT with the box Ge profile. The surface temperature distribution of these two devices is more uniform. Therefore, the thermal characteristics of the SiGe HBTs with the trapezoidal or triangular Ge profiles are improved obviously, the electronic characteristics are more thermally stable. Besides, the trapezoidal Ge profile can make a better trade-off for the requirement of Ge profile between the gain characteristics and the thermal characteristics.

关 键 词：多指功率SiGe HBT GE组分分布 温度分布 热学特性 增益特性 

分 类 号：TN322.8[电子电信—物理电子学]