基于杂散参数辨识的IGBT模块内部缺陷诊断方法  

Diagnostic Method for Internal Defects of IGBTs Base on Stray Parameter Identification

作　　者：周雒维[1] 周生奇[1] 孙鹏菊[1] 

机构地区：[1]重庆大学输配电装备及系统安全与新技术国家重点实验室,重庆400044

出　　处：《电工技术学报》2012年第5期156-163,共8页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金(51077137);国际科技合作计划(2010DFA72250)资助项目

摘　　要：为识别IGBT模块早期内部缺陷,增强其运行的可靠性,本文提出一种基于杂散参数辨识的IGBT模块内部缺陷的诊断方法。该方法利用最小二乘法辨识IGBT模块门极内部杂散参数因经受电、热老化而导致的变化,进而判断内部是否存在缺陷,及时制定维护措施,从而有效防止运行中突发失效及由此造成的设备损坏。与现有的故障诊断方法相比,其响应时间更充裕,实验研究结果验证了其诊断结论的正确性和实用性。In order to identify the early internal defects inside IGBTs and enhance the reliability level of IGBTs during running, a novel prognostic method for internal defects of IGBTs based on stray parameters identification is presented in this paper with principle and characteristic. This method employs the least square method to detect variations of stray parameters inside IGBTs as aging resulted by electrical and thermal stress, Comparing to traditional fault diagnosis, this method can provide enough time to avoid abrupt failures and damages to are verified by test results. equipment. The correctness and application value

关 键 词：IGBT模块 可靠性 缺陷 参数辨识 

分 类 号：TM464[电气工程—电器]