电迁移寿命预警电路设计  

Design of Electromigration Lifetime Prediction Circuit

作　　者：王浩[1,2,3] 罗宏伟[2,3] 陈义强[2,3] 陈媛[2,3] 

机构地区：[1]广东工业大学材料与能源学院,广东广州510006 [2]工业和信息化部电子第五研究所,广东广州510610 [3]电子元器件可靠性物理及其应用技术国家级重点实验室,广东广州510610

出　　处：《电子产品可靠性与环境试验》2012年第B05期233-237,共5页Electronic Product Reliability and Environmental Testing

摘　　要：提出了一种电迁移寿命的实时预测方法,并在0.18μm CMOS混合信号工艺下完成了预警电路的设计。预警电路与主电路放置在同一芯片上,经历相同的制造工艺和环境参数,任何影响主电路可靠性的因素都将施加在该预警电路上,从而克服了离线测试的局限性,具有实时在线测试的优点。当预警电路中电迁移引起的金属膜电阻器的阻值超过预设的界限时,其输出电平就会发生翻转,发出顶警信号,主电路即将发生失效。A real-time electromigration lifetime prediction method is proposed, and the design of the corresponding prediction circuit based on 0.18 μm CMOS mixed signal technology is presented. The prediction circuit and the main circuit are fabricated on one chip with the same manufacturing technology and environmental parameters, which can overcome the limitations of the offline testing and has the advantage of real-time prediction. When the resistance of the metal film resistor in the prediction circuit exceeds a predetermined value due to electromigration, a warning signal will be issued to indicate the impending failure of the main circuit.

关 键 词：电迁移 可靠性 预兆单元法 

分 类 号：TN402[电子电信—微电子学与固体电子学]