煅烧温度和恒温时间对ZnO/AAO/Si组装体系的影响  

Effects of Calcination Temperature and Holding Time on the Structure of ZnO/AAO/Si

作　　者：李菁[1] 张海明[1] 杨岩[1] 缪玲玲[1] 高波[1] 李芹[1] 

机构地区：[1]天津工业大学理学院,天津300160

出　　处：《半导体技术》2012年第5期381-385,394,共6页Semiconductor Technology

基　　金：天津市自然科学基金项目(09JCYBJC04400)

摘　　要：以AAO/Si为模板,采用化学气相沉积(CVD)的方法在不同温度下,通过煅烧Zn粉和C粉的混合物制备ZnO/AAO/Si组装体系,并对其结构和性质进行了研究。扫描电镜(SEM)结果表明:随着煅烧温度的升高,AAO表面的孔洞逐渐被封堵,当温度达到900℃时,在AAO的表面出现了一层ZnO薄膜。X射线衍射(XRD)结果显示,700℃时在XRD图谱上观看到六角纤锌矿的ZnO的衍射峰,并且随着温度的升高,ZnO的衍射峰逐渐增强,当温度升至800和900℃时出现了ZnAl2O4的衍射峰。因此,化学气相沉积制备组装体系时的最适温为700℃。在700℃时煅烧不同恒温时间制备的ZnO/AAO/Si组装体系SEM图显示,随着恒温时间的延长,孔的封闭效应逐渐明显。ZnO/AAO/Si composite structure was fabricated by calcinated Zn and C powder using CVD method at different temperature.Structure and optical properties of ZnO/AAO/Si composite structure were investigated using scanning electron microscopy（SEM） and X-ray diffraction（XRD）.The SEM results show that the pores of the AAO are gradually blocked with the increase of the temperature.ZnO film appeared at the surface of the AAO when the temperature reached 900 ℃.The XRD patterns demonstrate that the diffraction peaks of the ZnO appeared when the temperature reached 700 ℃.With the increase of the temperature,ZnO diffraction peaks increased gradually.The diffraction of ZnAl2O4 appeared when the temperature reached 800 and 900 ℃.Therefore,the optimum temperature for CVD method fabricated ZnO/AAO/Si composite structure is 700 ℃.The SEM results of different holding time at 700 ℃ show that with the increase of the holding time,the closed effect of the pore become clear.

关 键 词：AAO/Si模板 氧化锌 化学气相沉积 煅烧温度 恒温时间 

分 类 号：TB383[一般工业技术—材料科学与工程]