氮气退火对氧化镍薄膜光电特性的影响  

Effects of Nitrogen Annealing on the Photoelectric Characteristic of NiO Thin Film

作　　者：赵启义[1] 祁康成[1] 赵荣荣[1] 张国宏[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《材料导报》2012年第10期30-32,共3页Materials Reports

基　　金：四川省应用基础研究项目(2009JY0054)

摘　　要：利用磁控溅射法,在K9玻璃基底上沉积氧化镍(NiO)薄膜。采用不同温度对氧化镍薄膜进行氮气退火,使用UV-1700型分光光度计、JSM-6490LV型扫描电子显微镜、四探针电阻计等分析退火后氧化镍薄膜性能的变化。实验结果表明,500℃退火范围内,氧化镍薄膜的透过率随退火温度的升高明显增加,400℃时透过率达到最大在80%以上,且光学带隙最小,结晶度较高,薄膜成分变化较小,更适于太阳电池窗口层的应用研究。Thin films of NiO were deposited on K9 glass substrate by magnetron sputtering. At different temperatures, NiO thin film was annealed in nitrogen. Using UV-1700 spectrophotometer, JSM-6490LV scanning electron microscopy, four-probe resistance meter etc, the change of NiO film properties after annealing in nitrogen was analyzed. Tests show that the transmittance of NiO film increases significantly with the rising of annealing temperature under 500℃. When the temperature was 400℃, the transmittance,achieving the maximum, was above 80% and the optical band gap was the minimum. Also the crystallinity was higher and the composition of the thin film changed little, so it is more suitable for applied research of solar cell window layer.

关 键 词：磁控溅射 NiO薄膜 氮气退火 

分 类 号：TN304.2[电子电信—物理电子学]