化学溶液沉积法制备Nd和Sc/Al/(Sc,Al)共掺杂钛酸铋铁电薄膜的电性能研究  

Electrical Properties of Nd and Sc/Al/(Sc,Al) Cosubstituted Bismuth Titanate Films Obtained by Chemical Solution Deposition

作　　者：胡增顺[1,2] 杨桦[3] 晋玉星[1] 

机构地区：[1]开封大学公共计算机教研部,开封475004 [2]开封大学功能材料研究中心,开封475004 [3]开封大学软件技术学院,开封475004

出　　处：《材料导报》2012年第10期61-63,共3页Materials Reports

基　　金：河南省教育厅自然科学研究计划(2011C430002)

摘　　要：利用化学溶液沉积法在Pt/Ti/SiO2/Si(100)基底和700℃条件下分别制备了Nd和Sc/Al/(Sc,Al)共掺杂的钛酸铋薄膜Bi3.15Nd0.85Ti2.94Sc0.06O12(BNTSc)、Bi3.15Nd0.85Ti2.94Al0.06O12(BNTAl)和Bi3.15Nd0.85Ti2.94(Sc0.03,Al0.03)O12(BNT(Sc,Al)),并研究和对比了这一系列薄膜的微结构、介电、铁电和漏电流等特性。结果发现BNT(Sc,Al)薄膜具有较高的剩余极化强度和介电常数,其漏电流密度低于BNTAl薄膜。另外,还讨论了相关的物理机制。A series of Nd and Sc/Al/（Sc,A1） cosubstituted bismuth titanate films of Bi3.15Nd0.85Ti2.94SC0.06O12 （BNTSc）, Bis. 15 Nd0. 85 Ti2. 94 Al0. 06 O12 （BNTA1） and Bi3. 15 Nd0. 85 Ti2. 94 （ Sc0. 03, Al0. 03 ） O12 （BNT （ Sc, Al ） ） were prepared on Pt/Ti/SiO2/Si（100） substrates at 700℃ by a chemical solution deposition technique, respectively. A series of comparisons including structures, dielectric, ferroelectric and leakage current properties of the prepared films were carried out. It was found that BNT（Sc, Al） film exhibits higher remnant polarization and dielectric constant, but lower leakage current density than that of BNTAl films. The relevant physical mechanisms were also discussed.

关 键 词：铁电薄膜 共掺杂 BNT(Sc  Al)薄膜化学溶液沉积法 

分 类 号：TB34[一般工业技术—材料科学与工程]