β-FeSi_2/Si异质结的制备及性质研究  

Characterization and preparation of β-FeSi_2/Si hetero structure

作　　者：郑旭[1] 张晋敏[1] 熊锡成[1] 张立敏[1] 赵清壮[1] 谢泉[1] 

机构地区：[1]贵州大学理学院新型光电子材料与技术研究所,贵州贵阳550025

出　　处：《功能材料》2012年第11期1469-1471,共3页Journal of Functional Materials

基　　金：贵州省优秀科技人才省长基金资助项目(黔省专合字[2011]40号);贵州省国际合作资助项目(黔科合外G字[2009]700113);贵州大学引进人才资助项目(贵大人基合字[2009]002号);贵州省自然科学基金资助项目(黔科合J字[2008]2002);科技部国际合作专项资助项目(2008DFA52210);贵州省科技攻关资助项目(黔科合GY字(2011)3015);贵州省科技创新人才团队建设专项资金资助项目(黔科合人才团队(2011)4022);贵阳市科技局大学生创业资金资助项目([2010]筑科成大合同字4-1号03)

摘　　要：采用直流磁控溅射和真空退火方法制备β-FeSi2/Si异质结,首先在n型Si(100)衬底上沉积Fe膜,经真空退火形成β-FeSi2/Si异质结,Fe膜厚度约238nm,退火后形成的β-FeSi2薄膜厚度约为720nm。利用XRD、SEM和红外光谱仪分别研究了β-FeSi2薄膜的晶体结构、表面形貌和光学性质。霍尔效应结果表明,制备的β-FeSi2薄膜为n型导电,载流子浓度为9.51×1015cm-3,电子迁移率为380cm2/(V.s)。Hetero structures of β-FeSi2 /Si were prepared by DC-magnetron sputtering and vacuum annealing.Firstly,Fe film was deposited on n-type Si（100） substrate at room temperature,subsequently annealed in a vacuum furnace to form β-FeSi2/Si hetero structure.The thickness of Fe and β-FeSi2 was 238 and 720nm,respectively.The crystal structure,surface topography and optical properties of the β-FeSi2 film were characterized with X-ray diffraction（XRD）,scanning electron microscope（SEM） and infrared spectrometer.The electricity and transport properties of β-FeSi2 film were measured by Hall effect.The results indicated that β-FeSi2 film with n-type conducting,the electron concentration was 9.51×1015cm-3 and the mobility of electrons was 380cm2 /（V.s）.

关 键 词：磁控溅射 β-FeSi2/Si异质结 输运性质 

分 类 号：TB34[一般工业技术—材料科学与工程] TB303