应变Si1-xGex(100)电子散射几率  

Scattering rates of electrons in strained Si_(1-x)Ge_x(100)

作　　者：赵丽霞[1] 张鹤鸣[1] 宣荣喜[1] 胡辉勇[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2012年第3期86-89,105,共5页Journal of Xidian University

基　　金：国家部委资助项目(51308040203,6139801);中央高校基本科研业务费资助项目(72105499,72104089);陕西省自然科学基础研究计划资助项目(2010JQ8008)

摘　　要：基于费米黄金法则及玻尔兹曼方程碰撞项近似理论,针对离化杂质、声学声子、谷间声子及合金无序散射机制,研究了应变Si1-xGex/(100)Si材料电子散射几率与应力及能量的关系.结果表明:在应力的作用下,应变Si1-xGex/(100)Si材料声学声子及f2、f3型谷间声子散射几率显著降低.Si基应变材料电子迁移率增强与其散射几率密切相关.Based on Fermi＇s golden rule and the theory of Boltzmann collision term approximation, scattering rates of electrons in strained Si1-xGex/（100）Si is studied, including the ionized impurity, acoustic phonon, intervalley phonon and alloy disorder scattering rates. It is found that scattering rates of acoustic phonons and f2 and f3 intervalley phonons decrease obviously under strain. One of the two factors which lead to the electron mobility enhancement in Si-based strained materials is the electron scattering rate.

关 键 词：应变Si1-xGex 电子 散射 

分 类 号：TN432[电子电信—微电子学与固体电子学]