本征和Al3＋掺杂ZnO薄膜的特性研究  

Properties of Intrinsic and Aluminum-doped ZnO Thin Films

作　　者：宋立媛[1,2] 唐利斌[2] 姬荣斌[2] 刘新近[2] 陈雪梅[1,2] 薛经纬[2] 庄继胜[2] 王茺[1] 杨宇[1] 

机构地区：[1]云南大学工程技术研究院,光电信息材料研究所,昆明650091 [2]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2012年第5期256-259,共4页Infrared Technology

基　　金：国家自然科学基金(61106098)资助;兵器支撑项目资助

摘　　要：采用溶胶-凝胶方法在载玻片衬底上制备了本征及不同Al3+掺杂浓度的ZnO:Al薄膜,利用X射线衍射(XRD)、原子力显微镜,紫外-可见光吸收光谱及霍尔效应研究了Al3+掺杂浓度对ZnO:Al薄膜结构和光电性能的影响。结果显示,ZnO:Al薄膜为六角纤锌矿晶体结构,具有很高的沿c轴的(002)择优取向,Al3+掺杂并没有改变ZnO的晶体结构,只是Al取代了Zn;掺杂前后薄膜样品均在ZnO带边吸收的位置有较强的吸收而在可见光范围吸收较小;并且当Al3+掺杂浓度为1.5%(摩尔百分比)时所获得的ZnO:Al薄膜具有最小的电阻率,为26Ωcm。ZnO：Al thin films were prepared on the glass substrates by Sol-Gel method.The effects of Al3＋ dopant concentration on the structural,optical and electrical properties of ZnO：Al films were studied by X-ray diffraction,AFM,UV-Vis absorption spectrum and Hall effect.The results indicated that the ZnO：Al thin films have a preferred c-axis（002） orientation perpendicular to the substrates,it seems that no effect on the crystal structure with adding various Al3＋ dopant concentrations.The thin films still have the high visible transmittance.It was observed that 1.5 atm.% Al3＋ dopant concentration of ZnO：Al film makes the film to achieve the minimum resistivity.

关 键 词：ZNO:AL薄膜 X射线衍射 紫外-可见光吸收光谱 霍尔效应 

分 类 号：TN215[电子电信—物理电子学]