NPN型超高频小功率晶体管阵列的设计  

NPN superhigh frequency small power transistor array design

作　　者：张文凯[1] 王宏伟[1] 齐臣杰[1] 

机构地区：[1]北京信息科技大学理学院,北京100192

出　　处：《北京信息科技大学学报（自然科学版）》2012年第2期92-96,共5页Journal of Beijing Information Science and Technology University

基　　金：北京信息科技大学校科研基金项目(5026010947)

摘　　要：采用硅平面外延工艺,选定集成电路芯片电性能参数指标,运用集成电路设计的原则,设计NPN型超高频小功率晶体管阵列。由6个完全一致的超高频小功率晶体管组成。外形封装可根据设计需要,用DIP14或DIP16等外壳封装,具有频率高、对称性好,体积小、质量轻的特点,可应用在放大电路、开关电路中。By using silicon planar epitaxial process,the electric performance parameters of integrated circuit chip are selected,and NPN super high frequency small power transistor array is designed based on the integrated circuit design principle,composed by 6 identical ultra high frequency small power transistors.Outline package can be designed according to the need.DIP14 or DIP16 shell packaging,with high frequency,good symmetry,small volume,light weight characteristics,can be used in amplifying circuit and switch circuit.

关 键 词：高频 晶体管 阵列 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]