高压合成MgB_2超导体单晶的研究现状  

Progress in the Research on the Synthesis of MgB_2 by High Pressure Technology

作　　者：郭永庆[1] 

机构地区：[1]甘肃民族师范学院物理与水电工程系,甘肃合作747000

出　　处：《甘肃高师学报》2012年第2期18-21,共4页Journal of Gansu Normal Colleges

摘　　要：简要叙述了MgB2超导体的超导机制、超导特性及其应用,重点介绍了目前MgB2单晶体生长过程中存在的主要问题和高压合成MgB2超导体单晶的研究现状.Superconducting mechanism,the superconducting characteristics and the application of MgB2 superconducting materials are summarized.The main problems in the growth process of MgB2 single crystal by high-pressure technology are introduced.Main high-pressure methods for various Samples of MgB2 are given.

关 键 词：MGB2 高压和成 超导机制 单晶生长 

分 类 号：O469[理学—凝聚态物理]