Ar环境气压对纳米Si晶粒成核区范围的影响  

Influence of the ambient pressure of Ar on the range of nucleation area of Si nanoparticles

作　　者：褚立志[1,2] 邓泽超[2] 丁学成[2] 赵红东[1] 王英龙[2] 傅广生[1] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]河北大学物理科学与技术学院,保定071002

出　　处：《物理学报》2012年第10期463-467,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2011CB612305);国家自然科学基金(批准号:10774036);河北省自然科学基金(批准号:E2008000631;E2011201134);河北省光电信息材料重点实验室资助的课题~~

摘　　要：为了研究不同环境气压条件下纳米Si晶粒成核区的范围,采用波长为308 nm的XeCl脉冲准分子激光器,分别在1—200 Pa的Ar气环境下,烧蚀高阻抗单晶Si靶,在距离烧蚀点正下方2.0 cm处水平放置一系列单晶Si或玻璃衬底,沉积制备了纳米Si薄膜.Raman谱和X射线衍射谱测量证实了薄膜中纳米Si晶粒已经形成.扫描电子显微镜的测量结果表明,环境气压的变化影响了衬底上纳米Si晶粒的平均尺寸及其分布范围.根据成核区位置的确定方法,计算得出随着环境气压的增加纳米Si晶粒成核区的范围先变宽后变窄的规律.从烧蚀动力学的角度对实验结果进行了分析.In order to investigate the range of nucleation area of Si nanoparticles under different pressures, a single crystalline Si target with high resistivity is ablated by a XeC1 excimer laser （wavelength 308 nm, laser fluence 3 J/cm^2） in an ambient pressure range from 1 to 200 Pa of pure Ar gas. The Si nanocrystalline films are systemically deposited on glass or single crystalline Si substrates that are lined up at a distance of 2.0 cm under the ablation point. Raman and X-ray diffraction spectra indicate that the films are nanocrystalline. Scanning electron microscope images of the films show that the ambient pressure effect on the average size and the distributing range of Si nanoparticles on the substrate. According to the method of determining the location of nucleation area, it is found that the range of nucleation area of Si nanoparticles first broadens and then narrows with the increase of ambient pressure. The dynamics is analysed theoretically to explain the results.

关 键 词：脉冲激光烧蚀 纳米SI晶粒 环境气压 成核区 

分 类 号：TB383.1[一般工业技术—材料科学与工程]