具有超高耐压(>1200V)的薄埋氧层BPL SOI LDMOS(英文)  

Super-High Breakdown Voltage(>1 200 V)SOI LDMOS with a Buried P-Type Layer and a Thin BOL

作　　者：张海鹏[1] 许生根[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310018

出　　处：《电子器件》2012年第2期119-124,共6页Chinese Journal of Electron Devices

基　　金：Innovative Scientific Research Project for Graduate Student of Zhejiang Province(YK2010059);Project supported by the Science and Technology development plan of Zhejiang Province(2006AA09Z228)

摘　　要：为了在薄埋氧层SOI衬底上实现超高耐压LDMOS铺平道路,提出了一种具有P埋层(BPL)的薄埋氧层SOI LDMOS结构,耐压1200V以上。该BPL SOI LDMOS在传统SOI LDMOS的埋氧层和N型漂移区之间引入了一个P型埋层。当器件正向截止时,N型漂移区与P埋层之间的反偏PN结将承担器件的绝大部分纵向压降。采用2维数值仿真工具Silvaco TCAD对BPL SOI LDMOS进行虚拟制造和器件仿真,结果表明该结构采用适当的参数既能实现1 280 V的耐压,将BOL减薄到几百纳米以下又可以改善其热特性。To pave a way to realize super-high block characteristic of SOI LDMOS with thin buried oxide layer （BOL） ,a super-high breakdown voltage（ 〉1 200 V）SOI LDMOS with a buried P-type layer（BPL） and a thin BOL was proposed and virtually fabricated by 2D numerical process simulations with Silvaeo TCAD tools. The proposed BPL SOI LDMOS consists of an additional buried P-type layer which is inserted between BOL and N- drift region based on the conventional SOI LDMOS structure. When the device is biased in forward block state, the junction across the interface between N-drift region and the buried P-type layer is reversely biased, which bears the most part of the vertical forward voltage drop instead of thick BOL. It was proved by device simulation with Silvaco TCAD tools that the BPL SOI LDMOS structure can not only elevate its breakdown voltage up to 1 280 V with appropriate parameters,but also improve its thermal properties by reducing the thickness of BOL down to a few hundreds of nanometers or even less.

关 键 词：功率LDMOS P埋层SOI 工艺与器件仿真 超高耐压 热性能 

分 类 号：TN386[电子电信—物理电子学]