硅微电容式二维加速度传感器的加工与测试(英文)  

Fabrication and Test of a Capacitive Biaxial Microaccelerometer

作　　者：刘妤[1,2,3] 温志渝[1,2] 陈李[1,2] 杨红韵[3] 

机构地区：[1]重庆大学光电技术及系统教育部重点实验室,重庆400044 [2]重庆大学微系统研究中心,重庆400044 [3]重庆理工大学汽车学院,重庆400054

出　　处：《传感技术学报》2012年第4期444-447,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助项目(10176040)

摘　　要：设计了一种基于体硅加工技术的单敏感质量元差分电容式二维加速度传感器,并采用硅-玻璃静电键合、ICP工艺释放等技术完成了二维加速度传感器的加工。测试结果表明:该二维加速度传感器两个检测方向上的灵敏度基本一致,线性度较好,交叉干扰较小。X、Y方向的灵敏度分别为58.3 mV/gn、55.6 mV/gn;线性相关系数分别为0.9968、0.9961,交叉灵敏度分别为6.17%、7.82%。A capacitive biaxial microaccelerometer with a single proof mass is implemented. The sensor is fabricated by silicon-on-glass bulk silicon micromachining successfully, where the ICP etching and the anodic bonding process are utilized. The experimental results indicate the biaxial accelerometer with uniform axial sensitivities, good linearity and high cross-axis sensitivity immunity to the z-axis input. The sensitivity of the x direction is 58.3 mV/gn and y is 55.6 mV/gn ,the linear correlation coefficient of the x direction is 0. 9968 and y is 0. 9961 ,as well as the cross-axis sensitivity of the x direction is 6.17% and y is 7.82%.

关 键 词：MEMS加速度传感器 二维电容式传感器 体硅工艺 ICP深刻蚀 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]