多量子阱光开关器件的激子吸收及光调制特性  

The Exciton Absorption and Light Modulation Characteristics of MQW Light Switch Devices

作　　者：陈弘达[1] 陈志标[1] 杜云[1] 黄永箴[1] 吴荣汉[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《光电子．激光》2000年第2期143-146,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金重大资助项目!( 698962 60 ) ;重点资助项目 ( 6978980 2 )

摘　　要：我们分析了 Ga As/Al Ga As半导体多量子阱 (MQW)光开关器件的室温激子吸收行为及光调制特性 ,优化设计了多量子阱结构 ,研制出常通型和常关型两种类型光开关器件 ,并对器件的光调制特性进行了测量与研究。实验得出的结论与理论计算相符合 ,常通型器件对比度约为 10∶ 1;常关型器件对比度约为 4∶ 1。The exciton absorption and light modulation characteristics of GaAs/AlGaAs multiple quantum well (MQW) light switch devices have been analyzed.The measurements and investigations on the light modulation performance of the devices with multiple quantum well structure are reported.The light modulator devices are operated in two modes,normally on and normally off.The contrast ratio (CR) of the normally on modulators are more than 10∶1 and the CR of the normally off modulators are more than 4∶1.

关 键 词：多量子阱 激子吸收 光调制器 光开关器件 

分 类 号：TN256[电子电信—物理电子学]