连续波激光辐照半导体InSb材料的熔融破坏  

An Numerical Simulation of the Melt threshold of InSb Induced by CW Laser beams

作　　者：强希文[1] 刘峰[1] 张建泉[1] 陈雨生[1] 黄流兴[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《中国激光》2000年第4期372-376,共5页Chinese Journal of Lasers

摘　　要：采用数值方法 ,研究了半导体 In Sb材料受连续波激光辐照的熔融阈值 ,讨论了 In Sb材料的熔融阈值与入射激光波长、功率密度以及辐照时间的关系 ,同时考虑了载流子效应对靶内温升过程以及熔融阈值的影响 。By means of a numerical method, it deals with the problem of the melt threshold of semiconductors induced by CW laser beam. The melt threshold as a functions of wavelength, power and irradiating time of irradiating laser are given. The influence of the carrier effects on the temperature rise and melt threshold, the distributions of temperature and carrier concentration in the targets are also discussed.

关 键 词：激光辐照效应 锑化铟 连续波激光 

分 类 号：TN304.23[电子电信—物理电子学]