丝网印刷工艺制备铜铟镓硒(CIGS)薄膜  

Non-vacuum fabrication of CIGS film by screen printing method

作　　者：赵林娜[1,2] 王影[2] 周爱军[2] 李晶泽[2] 高涛[1] 

机构地区：[1]四川大学原子与分子物理研究所,四川成都610065 [2]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《西南民族大学学报（自然科学版）》2012年第3期431-434,共4页Journal of Southwest Minzu University(Natural Science Edition)

基　　金：国家自然科学基金(编号:10774103)

摘　　要：通过球磨CuIn0.75Ga0.25Se2颗粒获得纳米粉末,采用丝网印刷工艺制备CIGS薄膜,研究了硒化温度和不同高温后处理方式对CIGS薄膜表面形貌及晶体结构的影响.结果表明,采用丝网印刷工艺可以制备出均匀致密单一相的CIGS薄膜.硒化的温度越高,薄膜的结晶性越好.在600℃下,采用硫化锑(Sb2S3)代替硒源可以有效地改善CIGS薄膜的结晶性.CuIn0.75Ga0.25Se2 nano-powder particles are obtained by milling ball. CIGS thin films are prepared by screen-printing with the aim of investigating the effects of selenium and different high temperature treatments on the crystal structure and surface morphology. The results indicate that compact and single phase CIGS thin film can be prepared by using the screen printing process. The crystalline is demonstrated to become better with the increasing of the selenization temperature. To increase the CIGS thin-film crystalline, antimony sulfide （Sb2S3） is proved to be more effective than selenium source under a temperature of 600℃.

关 键 词：丝网印刷工艺 铜铟镓硒 硒化 薄膜 

分 类 号：O56[理学—原子与分子物理]