一种提高硅双极器件频率和功率的新技术  

A New Technology for Improving Cutoff Frequency and Output Power of Silicon Bipolar Transistors

作　　者：周蓉[1] 胡思福[1] 张庆中[1] 

机构地区：[1]电子科技大学微电子科学与工程系,四川成都610054

出　　处：《微电子学》2000年第2期100-102,共3页Microelectronics

摘　　要：提出了一种能同时提高硅双极器件频率和功率的新技术——具有深阱终端结构的新型梳状深阱结构技术。采用 MEDICI模拟分析表明 ,该技术可将双极器件的击穿电压 BVCB0 提高到平行平面结的 90 %以上 ;可减小寄生效应和漏电流 ,有助于提高小电流β0 ;可适当地增加集电区掺杂浓度 ,减小 τd,同时提高 ICM和 Po。采用该技术后 ,有效集电结的面积约为无阱器件的 50 % ,结电容较小 ,截止频率可提高一倍以上。该技术大大缓解了频率和功率的矛盾 。A new deep trench termination structure is proposed, which can simultaneously improve cutoff frequency and output power of silicon bipolar transistors. The results of MEDICI simulation indicate that the technology helps improve the avalanche breakdown voltage to over 90% of parallel planar junctions, improve β 0 of low current densities by reducing parasitic effect and leakage current. With the structure, the doping of the collector can be increased correspondingly, which is good for improving f T、I CM and P o. The effective collector junction area of the transistor with the new structure is half of that with no trench structure, which means the junction capacitance is very small and the cutoff frequency can also be improved above 100%.

关 键 词：硅双极器件 频率 功率 深阱终端结构 

分 类 号：TN303[电子电信—物理电子学]