3～5 GHz超宽带无电感CMOS低噪声放大器设计  

Design of Inductorless CMOS Low Noise Amplifier for 3～5 GHz UWB Receiver

作　　者：王巍[1] 宫召英[1] 杨铿[1] 马晓英[1] 唐政维[1] 王岳生[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《微电子学与计算机》2012年第6期130-133,137,共5页Microelectronics & Computer

摘　　要：基于TSMC O.18μm RFCMOS工艺设计了一种无电感并联负反馈的超宽带低噪声放大器(LNA).在3～5 GHz工作频率范围内,电阻电流复用技术为整体电路提供自偏置,使其在足够的带宽范围内均可实现较高增益;同时噪声相消技术又可消除部分沟道热噪声,在很大程度上降低了放大器的噪声系数,由仿真结果可以看到:LNA在3～5 GHz内实现了良好输入输出匹配和较好的线性度,同时得到了较好的电压增益和噪声性能;并且其在整个频带范围内增益达到11～13.9 dB,噪声系数小于4.6 dB.整个设计最大的优点是没有用到片上电感,使得芯片面积大大缩小,这对商业应用具有极大的吸引力。A shunt feedback inductorless UWB LNA implemented in a 180 nm CMOS technology is here reported. Covering a 3 to 5 GHz band, the circuit uses resistive current reuse technique as self bias to obtain the relative gain within wide band, and the noise cancellation technique to cancel part of thermo noise in the channel, which can effectively lower NF over the desired UWB band. The simulation results showed that the designed LNA achieves a NF of 4.6 dB in the 345 GHz UWB band and a power gain of 11-13.9 dB. The active inductance design greatly reduces the chip size, which has great potential in commercial applications.

关 键 词：超宽带 LNA 电流复用 噪声相消 有源电感 

分 类 号：TN722.3[电子电信—电路与系统]