AlGaN/GaN肖特基二极管中金属电极的制备方法研究  

The fabrication study of AlGaN/GaN Schottky diode metal electrode

作　　者：陈家荣[1] 

机构地区：[1]贵州民族学院计算机与信息工程学院,贵州贵阳550001

出　　处：《真空》2012年第3期58-60,共3页Vacuum

摘　　要：本文主要研究AlGaN/GaN二极管制备工艺中Ohmic Contact金属和Schottky Contact金属电极的制备,主要讨论了金属电极材料的选取,退火温度和退火时间对接触电阻的影响,最后得出了Ohmic Contact的比接触电阻和TiN的淀积参数。In this paper, the Ohmic Contact and the Schottky Contact for the preparation of A1GaN/GaN Schottky diodes are mainly studied. Effects of the metal electrode selection, annealing temperature and annealing time on the contact resistance are discussed. The specific contact resistivity and the deposition parameters for TiN are finally obtained.

关 键 词：Ohmic CONTACT SCHOTTKY CONTACT 比接触电阻 

分 类 号：TB43[一般工业技术]