双势垒隧道发光结Ⅰ-Ⅴ特性中的负阻现象  

THE NEGATIVE RESISTANCE PHENOMENON IN THE I-V CURVE WITH DOUBLE BARRIER LIGHT EMISSION TUNNEL JUNCTIONS

作　　者：王茂祥[1] 吴宗汉[2] 孙承休[1] 章继高[3] 

机构地区：[1]东南大学电子工程系,南京210096 [2]东南大学物理系,南京210096 [3]北京邮电大学,北京100876

出　　处：《电子科学学刊》2000年第3期492-495,共4页

基　　金：国家自然科学基金(69576006)

摘　　要：制备了含两层绝缘层的双势垒结构隧道发光结,介绍了其结构特点,分析了电子在结中的共振隧穿特性。结合电子隧穿特性及结的发光机理,对结I-V特性中负阻现象的产生及其与表面等离极化激元激发发光的关系进行了研究。The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed. In connection with the electronic resonant tunneling and light emission mechanism of the junction, the negative resistance phenomenon (NRP) in the I-V curve and the relation between NRP and Surface Plasmon Polariton(SPP) have been studied especially.

关 键 词：双势垒结构 隧道发光结 负阻现象 I-V特性 

分 类 号：TN383[电子电信—物理电子学]