GaAs表面硫钝化工艺新研究  

Novel Type of Sulf-Solution for GaAs Surface Passivation

作　　者：周路[1] 王云华[1] 贾宝山[1] 白端元[1] 乔忠良[1] 高欣[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室长春130022^

出　　处：《真空科学与技术学报》2012年第5期376-378,共3页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61177019,61176048);实验基金项目(9140C3102071001)

摘　　要：为得到GaAs表面稳定的钝化层,以(NH4)2S为主要对象,首先研究不同溶剂对钝化效果的影响,得出溶液极性越小,钝化效果越好的结论;研制出一种新的钝化溶液:Se+(NH4)2S+叔丁醇。通过光致发光(PL)谱对比(NH4)2S+去离子水、(NH4)S2+异丙醇、(NH4)2S+叔丁醇、Se+(NH4)2S+叔丁醇等几种不同含硫溶液钝化GaAs(100)表面的发光特性。通过测试PL发光谱发现,Se+(NH4)2S+叔丁醇溶液处理的GaAs(100)表面发光强度最强,是未做钝化处理的25倍左右。钝化处理后的基片在空气中放置数小时,PL谱未见明显退化。得出Se+(NH4)2S+叔丁醇不论从发光强度还是稳定性来说,都是较为理想的钝化溶液。A novel type of sulf-solution has been successfully developed to passivate the GaAs （100） wafer sur- faces. The newly developed sulf-solution mainly contains Se ＋ （NH4）2S ＋ t - C4H9OH. The influence of the different sulf- solutions, such as （NH4）2S ＋ H20 （de-ionized water）, （NI-I4）2S ＋ C3H7OH, （NH4）2S ＋ t - C4H9OH, and Se ＋ （NH4）2S ＋ t- C4H9OH,on the passivation of the GaAs surfaces was characterized and compared with argon ion excited photolumi- nence （PL） spectroscopy. The preliminary results show that the sulf-solution, Se ＋ （NH4）2S ＋ t - C4H9OH, outperforms all the other three sulf-solutions. For instance, after immersion in the Se ＋ （NH4）2S ＋ t - C4H9OH solution at 50℃ for 20 min, the PL intensity was found to be 25 times higher than that of the control sample; no PL-intensity degeneration was observed after exposure to air for three hours.

关 键 词：砷化镓 钝化 光致发光 非辐射复合 

分 类 号：O472.1[理学—半导体物理]