消除区熔硅单晶生长中“硅刺”的研究  

The Institute of How to Avoid Spike Creation in the FZ Silicon Single Crystal Progress

作　　者：刘燕[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2012年第5期32-34,52,共4页Equipment for Electronic Products Manufacturing

摘　　要：在无位错FZ硅单晶生长过程中,长"硅刺"是一种对单晶生长十分有害且常见的现象。单晶生长过程中一旦出现"硅刺",如不能及时消除,会导致中途停炉,不仅浪费原料,而且影响生产,因此,如何减少和消除硅刺,是FZ单晶拉制中,需要着重解决的问题。对FZ硅单晶生长过程中,减少和消除硅刺进行了研究,尤其是加热线圈结构设计对抑制硅刺产生的重要作用。通过对线圈的合理改进,使FZ单晶生长过程中避免或减少"硅刺"的出现。In the progress of Nan dislocation FZ growing, spike creation as a bad phenomenon occurs frequently, in case a spike forms. If the spike can not be eliminated in time, the progress has to stop, and the polycrystalline material will be go to waste, and the natural production must to be influenced. So how to avoid spike creation in the FZ silicon single crystal progress is a very important problem to resolve. In this paper, the problem of how to avoid spike creation was investigated, especially the relationship of induction coil design with the spike creation. Avoiding spike creation in the FZ silicon single crystal progress effectively by optimizing induction coil design is the aim of this institute.

关 键 词：区熔 线圈 硅刺 

分 类 号：TN304.053[电子电信—物理电子学]