相移掩模清洗结晶控制  

Controlling Haze of The Phase Shift Mask clean Process

作　　者：张海平 尤春 周家万 陈卓 

机构地区：[1]无锡中微掩模电子有限公司,无锡214035

出　　处：《电子工业专用设备》2012年第5期41-42,47,共3页Equipment for Electronic Products Manufacturing

摘　　要：在高端集成电路制造方面,普通二元掩模已经不能满足晶圆使用要求。目前,高端(线宽0.18μm以下)集成电路生产主要采用相移掩模。相移掩模(Phase Shift Mask)制作过程中,掩模表面结晶(Haze)问题较难控制。为了控制和解决相移掩模表面结晶问题,提高成品率,主要讨论了不同的清洗工艺(Recipe)对相移掩模结晶的影响。然后通过实验验证了通过优化清洗工艺(Recipe),可以明显改善相移掩模表面结晶问题,达到控制相移掩模表面结晶的目的。With the development of IC, binary mask can＇t be used for the high-end IC manufacture. So the phase shift mask is mainly used for the high-end （ linewidth less than 0.18 μm） IC manufacture. In the phase shift mask manufacture process, haze is very difficult to control. Some different clean recipes having different influcnce to haze have been discussed in this paper, Than after some optimizing clean recipes contrastive experiment, the haze phenomenon is getting better and can be in control.

关 键 词：集成电路 相移掩模 结晶 工艺方法 

分 类 号：TN305.97[电子电信—物理电子学]