基于变压器隔离的功率MOSFET驱动电路参数设计  

The Parameters Design for Power MOSFET Driver Circuit Based on Transformer Isolated

作　　者：廖鸿飞[1] 梁奇峰[1] 彭建宇[1] 

机构地区：[1]中山火炬职业技术学院,广东中山528400

出　　处：《通信电源技术》2012年第3期31-32,51,共3页Telecom Power Technology

摘　　要：介绍了基于单电容变压器隔离及双电容变压器隔离的功率MOSFET驱动电路,并对驱动电路中各元器件的参数设计进行了详细的论述。进一步对所提出的设计方法进行了实验验证,实验结果表明该设计方法是合理有效的,驱动波形平滑无振荡,并且有较快的上升时间。This paper introduces the power MOSFET driver circuit based on the single capacitor and dual capacitors transformer isolation, then analyzes the circuit and discusses the parameter design for the driver components in detail. Experiment designs for the isolation driver circuit has verified the parameter design method is feasible. The test result shows the diver waveform has a short rise time, smooth and no oscillation.

关 键 词：隔离驱动 驱动变压器 功率MOSFET 

分 类 号：TM46[电气工程—电器] TN386.1[电子电信—物理电子学]