金刚石膜电化学氧化液的制备及清洗技术研究  

Preparation of Electrochemical Oxidation Solution with Diamond Film Electrode and Study on Cleaning Technology

作　　者：张艳[1] 檀柏梅[1] 高宝红[1] 刘玉岭[1] 黄妍妍[1] 

机构地区：[1]河北工业大学微电子技术与材料研究所,天津300130

出　　处：《微电子学》2012年第3期406-410,共5页Microelectronics

基　　金：国家中长期科技发展规划02科技重大专项(2009ZX02308)

摘　　要：提出了一种采用电化学去除硅片表面有机物的新的清洗方法,用金刚石膜电极作为阳极,电化学氧化硫酸铵溶液生成稳定的强氧化溶液,电解液的氧化性通过间接碘量法测量。通过大量实验,优化初始电解液的浓度以及初始温度等因素,得到氧化强度最佳的电化学清洗液。用自制氧化液进行硅片表面有机物的清洗实验,并与传统的RCA清洗方法进行对比。通过XPS分析可知,采用新的电化学氧化溶液清洗后的硅片表面有机物去除效果明显优于对比实验样品。A new cleaning technique was developed to get rid of organics on the surface of the silicon. In this method, diamond film electrode was used as anode and ammonium sulfate solution was electrochemically oxidized to get a stable and strong oxidizer solution, also, indirect iodimetry was used to study the oxidation capability of the electrolyte. Concentration of the initial electrolyte and the initial temperature were optimized to achieve electrochem ical cleaner with best oxidation strength. The new oxidation liquid was used to clean organics on the wafer surface, and a comparison was made with conventional RCA cleaning method. Analysis by XPS detection showed that the proposed new cleaning method with electrochemical oxidation solution had better effect in removing organics on the wafer surface.

关 键 词：金刚石膜电极 电化学 清洗 有机物 氧化液 

分 类 号：TN305.97[电子电信—物理电子学]