纳米GaAs-SiO_2镶嵌复合薄膜的发光特性  

Luminous Characteristics of Mosaic Thin Film with GaAs Microcrystallites Embedded in SiO_2 Matrix

作　　者：石旺舟[1] 梁厚蕴[1] 

机构地区：[1]汕头大学功能材料实验室,广东汕头515063

出　　处：《功能材料》2000年第3期276-277,共2页Journal of Functional Materials

基　　金：广东省自然科学基金;苏州大学薄膜材料开放实验室基金

摘　　要：采用射频磁控共溅射法制备了纳米GaAs -SiO2 镶嵌复合薄膜。通过X射线衍射、透射电镜观察和X射线光电子能谱等手段研究了薄膜的结构及其与沉积过程中基片温度间的关系。测量了薄膜的光致发光特性。结果表明 ,薄膜由晶态的GaAs及非晶SiO2 两相组成 ,GaAs在沉积过程中未明显氧化 ,且以纳米颗粒形式均匀地弥散 ;GaAs的平均粒径依赖于沉积时的基片温度。通过控制基片温度 ,成功地获得了GaAs的平均粒径分别为 3～ 10nm的GaAs -SiO2 镶嵌复合薄膜。测得发光谱线由多峰叠加组成 ,其峰位随平均粒径变小而蓝移 ;当平均粒径为 10nm时 ,发光谱线位于可见光波段 ,峰位分别为 5 12、5 3 0、5 5 0、5 78nm。采用量子限域理论讨论了光发射波长与颗粒直径间的关系。Semiconductor GaAs microcrystallites were successfully embedded in SiO 2 thin films by magnetron co-sputtering technique.Structures of the thin films were characterized by transmission electron microscopy,X-ray diffraction and X-ray photoelectron microscopy.The results show that the thin films are composed of GaAs microcrystallites and amorphous SiO 2 when the substrate temperature during deposition is from 300℃ to 550℃,and that GaAs microcrystallites are uniformly dispersed in the SiO 2 matrix with quite low amount of oxides.The average size of GaAs microcrystallites depends on the substrate temperature during deposition,and GaAs microcrystallites with average size of 3～10nm have achieved.Luminous spectra of the thin films were measured.The results show that the luminous spectra are composed of 4 peaks.Their energies are ralated to the size of GaAs microcrystallites and the relationship is discussed in terms of the theory of quantum confinement effect.When the average size is 10nm,the peaks are located at 512,530,550 and 578nm.

关 键 词：纳米GaAs-SiO2薄膜 镶嵌复合 发光特性 

分 类 号：TN304.23[电子电信—物理电子学]