基于单轴微拉伸的TSV铜力学性能研究  

Investigation of Mechanical Properties of Cu-TSV by Uniaxial Micro-tensile Test

作　　者：李君翊[1,2] 汪红[1,2] 王溯 王慧颖[1,2] 程萍[2] 张振杰[1,2] 丁桂甫[1,2] 

机构地区：[1]微米/纳米加工技术国家重点实验室,上海200240 [2]上海交通大学微纳科学技术研究院,上海200240 [3]上海新阳半导体材料股份有限公司,上海201616

出　　处：《复旦学报（自然科学版）》2012年第2期184-189,I0004,I0005,共8页Journal of Fudan University：Natural Science

基　　金：科技部重大专项基金资助项目(02专项:2011ZX02702);国家自然科学基金资助项目(50977056)

摘　　要：电子产品的微型化趋势使芯片的三维集成概念应运而生,并通过硅通孔(TSV-through silicon via)技术得以实现.为了测试TSV中互连铜(Cu-TSV)的力学性能,提出了1个简便、易于操作的单轴微拉伸方法.利用有限元分析优化设计Cu-TSV微拉伸试样的支撑框架结构,有效减小试样在制作及操作过程中的损伤;种子层采用溅射Ti膜取代传统的溅射Cr/Cu膜,减小了电镀过程中的应力,避免了对种子层碱性刻蚀时对试样的腐蚀;采用单轴微拉伸系统对优化设计与制备的Cu-TSV微拉伸试样进行测试.经测试得到的Cu-TSV的杨氏模量与抗拉强度为25.4～32.9GPa和574～764MPa.The miniaturization trend of microelectric products gives birth to 3D stacking of chips, which is realized by using TSV （through silicon via） technique. A novel micro-tensile specimen of the uniaxial micro-tensile test for measuring the mechanical properties of Cu-TSV is proposed. Finite-Element Method （FEM） has been used to optimize the design of the supporting frame of the sample with a Cu-TSV thin film, which can effectively reduce the damage ratio of the sample during operations. The surface-treated Ti seed layer has substituted for the traditional Cr/Cu seed layer to reduce the stress concentration and prevent the specimen from alkali corrosion when etching the seed layer. The samples have been tested by the uniaxial micro-tensile system to obtain the mechanical properties of the Cu-TSV thin film. The measured Young＇s modulus and the ultimate tensile strength of Cu-TSV is 25.4--32. 9 GPa and 574--764 MPa, respectively.

关 键 词：硅通孔 互连铜 微拉伸 微观力学性能 

分 类 号：TQ153[化学工程—电化学工业]