UHV/CVD外延生长锗硅碳三元合金中碳的应变缓解效应  

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

作　　者：叶志镇[1] 章国强[1] 亓震[1] 黄靖云[1] 卢焕明[1] 赵炳辉[1] 汪雷[1] 袁骏[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2000年第3期239-244,共6页半导体学报（英文版）

基　　金：国家自然科学基金重大项目 !( 69890 2 3 0 );国家自然科学基金!( 696860 0 2 )

摘　　要：碳的加入为 Si- Ge系统在能带和应变工程上提供了更大的灵活性 .处于替代位置的碳可以缓解 Si Ge合金的应变 ,同时调节其能带 .报道了用 UHV/CVD生长的掺碳达 2 .2 %的锗硅碳合金 ,获得了良好的外延层质量 ,应变缓解效应明显 .使用了 X射线衍射 ( XRD) ,二次离子质谱( SIMS)与高分辨电子透射显微镜 ( HRTEM)对外延层进行检测 ;使用傅里叶红外吸收光谱( FTIR)确定碳原子处于替代位置 。The ternary alloy of SiGeC has attracted much attention in recent years. The strain in Si 1-x-y Ge\-xC\-y the epilayer can be relieved and the band gap can be modified because of the carbon for substitute.High quality Si 1-x-y Ge xC y alloy with 2\^2% C is grown at a relatively high temperature (760℃) on Si(100) wafer using Ultra\|High Vacuum/Chemical Vapor Deposition (UHV/CVD) system. The samples are investigated with high\|resolution cross\|sectional transmission electron microscope (HRTEM) and X\|ray diffraction(XRD). Relatively flat growth profiles of the film are confirmed by secondary ion mass spectroscopy (SIMS). Fourier transform infrared spectroscopy (FTIR) is also used to testify that the carbon atoms are on the substitutional sites.

关 键 词：锗硅碳合金 碳 外延生长 应变缓解效应 

分 类 号：TN304.055[电子电信—物理电子学]