HgCdTe外延用的CdZnTe衬底研制  

Preparation of CdZnTe Substrate Used in HgCdTe Epitaxy

作　　者：刘克岳[1] 王金义[1] 张学仁[1] 赵宏[1] 张健平 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《半导体技术》2000年第2期38-42,共5页Semiconductor Technology

摘　　要：阐述了 Cd Zn Te衬底在红外焦平面阵列探测器研究中的重要性 ;概括了 Cd Zn Te晶体生长的方法、原理和工艺步骤 ;分析了影响晶体质量 (单晶面积、组分及均匀性、结晶完整性、光电特性 )的因素 ,并提出了与质量相关的控制技术 ;介绍了 Cd Zn Te衬底制备过程中 ,晶片处理的工艺和步骤 (晶锭的定向切割、单晶划片、极性鉴别、磨抛、腐蚀 ) ;报道了目前 Cd Zn Te晶体的性能水平、晶片处理结果和 Cd Zn Te的应用情况。The importance of CdZnTe substrate in infrared focal plane array devices is expounded.The crystal growth method and the working principle and process are summarized.The influential factors of crystal quality(area of single crystal,composition and its uniformity,crytallization,electro optical properties)are studied,and the controlling measures on crystal quality are presented.The steps and technology of wafer preparation(orientation saw,single crystal parting,polarity distinguishing,lapping and polishing,chemical etching)are introduced in the process of CdZnTe substrate preparation.The crystal property and the results of wafer preparation are reported.

关 键 词：CDZNTE 晶体半底 红外探测器 

分 类 号：TN213[电子电信—物理电子学]