CZ硅单晶中旋涡缺陷对低频大功率管制造的影响  

Influence of Swirl Defects in CZ Silicon on Process of Power Transistor

作　　者：董尧德 

机构地区：[1]浙江硅峰电子有限公司,开化324300

出　　处：《半导体技术》2000年第2期43-45,共3页Semiconductor Technology

摘　　要：CZ硅晶片中的旋涡缺陷在器件制造的热循环过程中 ,会转化成体内杆状层错 ,且易集结在发射结对应下方的基区和集电结附近 ,从而导致 EB结和 CB结的软击穿现象进行了研究 ,并采取了适当措施 。The effect of swirl defects in Chochralski silicon wafers on process of power transistor has been investigated.It is shown that during heat treatment the swirl defects are transformed into bulk stacking faults and congregated in the base and collector junction region underneath the emitter junction,and eventually cause excess leakage current.Therefore several precautions regarding crystal growth and wafer process have to be taken to eliminate the swirl defects or to control its effects.

关 键 词：旋涡缺陷 器件制作 CZ硅单晶 大功率器件 低频 

分 类 号：TN305[电子电信—物理电子学]