单电子晶体管/场效应管混合存储单元数值分析  

Numerical Analysis of Single Electron Transistor/Field Effect Transistor Hybrid Memory Cell

作　　者：郭靖[1] 蒋建飞[1] 蔡琪玉[1] 

机构地区：[1]上海交通大学微电子研究所,上海200030

出　　处：《上海交通大学学报》2000年第2期161-168,共8页Journal of Shanghai Jiaotong University

基　　金：国家自然科学基金!(69890224);上海市AM 基金!(98009)

摘　　要：基于背景电荷不敏感单电子晶体管／场效应晶体管混合存储单元利用单电子晶体管源漏电流随栅电压周期振荡的特性工作，以半经典的单电子正统理论为基础，采用计算机数值模拟的方法，分析了背景电荷不敏感单电子晶体管／常规场效应晶体管混合存储单元的工作原理和基本特性．提出了存储单元中分别以三结电容耦合单电子晶体管和单电子旋转栅替代双结单电子晶体管的新结构，其主要思想是通过增加单电子器件中的串联隧道结数来抑制各种噪声．模拟结果表明，新结构的系统性能，特别是抗噪声性能有一定提高．The background charge independent single electron transistor (SET)/field effect transistor (FET) hybrid memory cell works on the basis of the periodic dependence of the drain current of SET on its gate voltage. The characteristics of the hybrid memory cell were analyzed based on the semiclassical single electron orthodox theory by computer aided numerical simulation. New structures of replacing two junction SET with three junction capacitance coupled SET and single electron turnstile respectively were presented. The main idea is to improve the anti noise performance by increasing the number of tunneling junctions in series. The simulation results indicate the improvements in system performance, especially the anit noise performance of the new structure.

关 键 词：单电子晶体管 混合存储单元 场效应管 数值分析 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构] TN389[自动化与计算机技术—计算机科学与技术]