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作 者:程赛[1] 吕惠民[1] 石振海[2] 崔静雅[1]
机构地区:[1]西安理工大学应用物理系,西安710048 [2]西安理工大学应用化学系,西安710048
出 处:《物理学报》2012年第12期414-419,共6页Acta Physica Sinica
基 金:国家自然科学基金(批准号:11074200)资助的课题~~
摘 要:为了简化AlN/C复合泡沫材料的制备流程,本文采用复分解反应法制备AlN纳米材料,并通过800℃退火处理使其在碳泡沫衬底上重结晶为六方相AlN纳米线.通过形貌表征测试,纳米线为表面光滑的长直形圆柱体,直径约50 nm,长度10μm以上,在碳微球表面沿[001]方向生长.同时,采用VLS生长机理对纳米线的生长进行了解释.对样品光致发光谱的研究表明,中心波长423 nm处存在一尖锐发光峰且随温度升高发生明显的红移现象,系C替N杂质能级跃迁发光所致.样品在紫光波段具有良好的光致发光特性,有望应用于光探测器领域.To simplify preparation process of A1N/C composite foam, A1N nanomaterials are prepared via double decomposition reaction and then 800 °C annealing process to recrystallize hexagonal A1N (h-A1N) nanowires on carbon foam substrate. Fore the morphology characterization it follows that, h-A1N nanowires with straight cylindrical morphology grow along the [001]direction on carbon micro- spheres surface and are about 50 nm in diameter and several micrometers in length. Meanwhile, the growth mechanism of nanowire is interpreted as vapor-liquid-solid(VLS) process. The photoluminescence(PL) spectrum of as-prepared sample is also researched, and the results show that a sharp photoluminescence peak appears at 423 nm and shifts toward the red side with temperature increasing. The peak is attributed to the transition luminescence, owing to the substitution of C for N impurity energy level. The sample has good PL character in purple light band and is potential to be used in the photodetector field.
分 类 号:TB383.1[一般工业技术—材料科学与工程]
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