基于1/f噪声变化的pn结二极管辐射效应退化机理研究  

Radiation degradation mechanism of pn-junction diode based on 1/f noise variation

作　　者：孙鹏[1] 杜磊[1] 何亮[1] 陈文豪[1] 刘玉栋[1] 赵瑛[1] 

机构地区：[1]西安电子科技大学技术物理学院,西安710071

出　　处：《物理学报》2012年第12期534-540,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61106062)资助的课题~~

摘　　要：基于pn结二极管辐射效应退化机理中位移效应和电离效应之间的关系,并结合pn结二极管辐射退化的噪声机理,得到了pn结二极管辐射诱导低频噪声的变化规律,发现两种效应引起的二极管噪声变化规律之间的不一致性.根据实验得到的噪声变化规律,判断出了辐射应力条件下两种效应之间的关系,很好地解释了实验中出现的不符合原有理论解释的现象,对器件加固的研究有着重要意义.Based on the relationship between ionizing damage effect and displacement damage effect under radiation degradation mechanism of pn-junction diode, and combined with the noise theory of radiation degradation of pn-junction diode, a change law of low frequency noise of pn-junction diode under radiation is found. The inconsistency between the change laws of of two kinds of effects is found. Based on the experimental result, the relationship between two kinds of effects is judged. This relationship can explain the experimental result. This is very important for the device hardening research.

关 键 词：PN结 辐照损伤 1/f噪声 损伤 

分 类 号：TN31[电子电信—物理电子学]