忆阻器材料的研究进展  

Research Progress on Resistive Random Access Memory Materials

作　　者：曲翔 徐文婷[1,2] 肖清华 刘斌 闫志瑞 周旗钢 

机构地区：[1]有研半导体材料股份有限公司,北京100088 [2]北京有色金属研究总院,北京100088

出　　处：《材料导报》2012年第11期31-35,共5页Materials Reports

基　　金：国家科技重大专项项目(2008ZX02401)

摘　　要：忆阻器(RRAM)是一种新兴的非挥发性存储器,具有简单的器件结构、较快的操作速度和相对较小的功耗。简述了忆阻器的基本原理以及该领域材料方面的最新研究进展,其中重点介绍了HP忆阻器模型;综述了基于不同薄膜材料制备的忆阻器的特性,如有机材料、固态电解液材料、多元金属氧化物、二元金属氧化物等;阐述了忆阻器的重要意义及面临的巨大挑战,提出了未来该领域需要加强研究的若干问题。Resistive random access memory （RRAM）, ture , faster operating speed and lower power. Basic principle a novel non-volatile memory, has a simple device struc and recent progresses of RRAM are summarized briefly. HP RRAM model is specifically illustrated. Properties of the RRAM fabricated by different film materials are demon- strated, including organic materials, solid-state electrolyte materials, multi-metal oxides, binary metal oxides etc. The significance and challenge for RRAM are presented. In addition, the problems in RRAM research in future are proposed.

关 键 词：忆阻器 薄膜材料 阻变机制 电激励 

分 类 号：TB3[一般工业技术—材料科学与工程]