微型NiFe磁性薄膜元件中Neel畴壁极性的转变过程  

THE TRANSITION PROCESS OF POLARITY OF NEEL DOMAIN WALLS IN SMALL MAGNETIC THIN FILM ELEMENT

作　　者：余晋岳[1] 朱军[1] 周狄[1] 禹金强[1] 俞爱斌[1] 蔡炳初[1] 魏福林[2] 

机构地区：[1]上海交通大学信息存储研究中心国家教育部薄膜与微细技术重点实验室,上海200030 [2]兰州大学磁性材料研究所国家教育部应用磁学重点实验室,兰州730000

出　　处：《金属学报》2000年第4期359-363,共5页Acta Metallurgica Sinica

摘　　要：观察和分析了３００μｍ×４０μｍ×４０ｎｍ的 ＮｉＦｅ磁性薄膜元件在难轴方向反磁化时磁畴结构转变，特别是 Ｎｅｅｌ畴壁从正极性壁（Ｎ_＋）转变为负极性壁（Ｎ＿）的全过程．磁畴结构的转变包含畴壁合并、封闭畴转变、钩形畴转变及Ｎｅｅｌ畴壁极性转变等不可逆因素．对畴壁极性转变的两种方式（即 Ｎ_＋→Ｎ＿直接转变及经由十字壁（Ｎ_ｃｔ）的 Ｎ_＋→Ｎ_ｃｔ→Ｎ＿间接转变）进行了分析讨论． Ｎ＿往往在元件末端新生封闭畴和正极性主畴壁的连结点成核，然后向中间扩展． Ｎ_＋→Ｎ_ｃｔ的转变是通过 Ｎ_＋ 壁的数次分裂来实现的．The transition process of domain structure, especially the total transition process of Neel wall from positive polarity wall (N_+) to negative polarity wall (N_), during magnetization reversal along hard-axis direction in small NiFe magnetic thin film element has been observed and analysed. The length, width and thickness of the film are 300 μm, 40 μm and 40 nm respectively. The transition of domain structure involves some irreversible processes such as domain wall mergence, closure domain transition, hooklike domain transition and polarity transition of Neel wall. The two ways of transition of domain wall polarity, namely direct transition (N_+→N_) and indirect transition (N_+→N_ct→N_) through cross-tie domain wall (N_ct), have been discussed in detail. Usually, the N_+ will nucleate at the linking point of newly emerged closure domain and positive polarity main domain wall, then extend to the center. The transition from N_+ to N_ct is realized through several splittings of N_+. All the mentioned phenomena above have not been paid close attention and fully studied in the previous literature.

关 键 词：磁性薄膜元件 反磁化 磁畴 Neel畴壁 

分 类 号：O484[理学—固体物理] TM27[理学—物理]