非晶Si_(1-x)Ge_x:H薄膜太阳能电池研究  

A study on solar cell of a-Si_(1-x)Ge_x:H thin films

作　　者：费英[1] 史力斌[1] 

机构地区：[1]渤海大学数理学院,锦州121013

出　　处：《原子与分子物理学报》2012年第3期532-538,共7页Journal of Atomic and Molecular Physics

基　　金：教育部科学技术重点项目(211035);辽宁省自然科学基金(201102004)

摘　　要：运用AMPS—ID程序研究了a-SiC:H/a-Si_(1-x)Ge_x:H/a-Si:H薄膜太阳能电池的光电特性.分析了a-SiC:H/a-Si_(1-x)Ge_x:H/a-Si:H薄膜太阳能电池短路电流、断路电压、填充因子和光电转化效率随Ge成分(或含量)x和a-Si_(1-x)Ge_x:H层厚度的变化.计算结果表明x=0.1和a-Si_(1-x)Ge_x:H厚度h=340 nm时,转化效率达到最大值9.19%.另外,讨论了各种因素对太阳能电池性能的影响.The AMPS--ID program is used to investigate the electrical and optical properties of a-SiC.H/a-Sil-xGex.H/a-Si.. H thin film solar cell. The short circuit current density, open c^rcuit voltage, fill factor and efficiency of the solar cell are investigated. The efficiency of the solar cell is 9.19% as the thickness of a-Sil-xGex.H is 340 nm with the Ge content x=0.1. In addition, we also discuss the fac- tors which affect the solacoll efficiency.

关 键 词：太阳能电池 薄膜 半导体 

分 类 号：O472.3[理学—半导体物理]