反应溅射Si-C-N薄膜的结构分析  

STRUCTURAL ANALYSIS OF SiCN FILM PREPARED BY REACTIVE SPUTTERING

作　　者：肖兴成[1] 江伟辉[1] 彭晓峰[1] 宋力昕[1] 胡行方[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《功能材料与器件学报》2000年第1期59-63,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金! (59782 0 0 6 ) ;国家攀登计划!(0 7- 0 1)

摘　　要：本文用射频反应磁控溅射制备了SiCN薄膜 ,对薄膜的化学成分、结构进行了研究。结果表明 ,反应气体N2 、Si、C三者之间形成了Si-C、Si-N和C -N键 ,构成了复杂的网络结构。成分分析表明薄膜的化学计量式近似为SiCN。对比分析了反应溅射制备SiCN、CNx、SiNy和SiCzIn this paper, the SiCN films were prepared by reactive magnetron sputtering and the structural analyses were carried out by XPS and FTIR. The results showed that C, N, and Si were bonded with each other. A complex network formed consequently. The stoichiometric proportion of the prepared films is approximately Si:C:N=1:1:1. The FTIR spectra of SiCN films as well as amorphous CN x, SiN y and SiC z films were also given in this paper.

关 键 词：SiCN薄膜 结构分析 XPS FTIR 

分 类 号：O484[理学—固体物理]