溶胶–凝胶法制备Pb(Zr_x,Ti_(1–x))O_3薄膜研究进展  

Research progress of Pb(Zr_x,Ti_(1-x))O_3 thin films prepared by sol-gel method

作　　者：王锡彬[1] 熊杰[1] 郭培[1] 朱聪[1] 陶伯万[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2012年第7期70-75,共6页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.50902017)

摘　　要：Pb(Zrx,Ti1-x)(PZT)铁电薄膜因具有优良的铁电性、压电性、热释电性和声光性能而受到广泛关注,其电、光性能与其制备过程密切相关。简要介绍了PZT薄膜制备工艺流程,系统地从前驱体溶液、摩尔比r(Zr:Ti)、热处理工艺、电极材料以及掺杂改性等五个方面概述了sol-gel法制备PZT薄膜的研究进展,并指出了目前sol-gel法制备PZT铁电薄膜研究中存在的一些问题以及未来的研究方向。Pb（Zrx,Ti1–x）O3 ferroelectric thin films have attracted fully interest due to its excellent ferroelectricity, piezoelectricity, pyroelectricity, acoustic and optical properties. The electrical and optical properties of the films are closely related to its preparation process. The process flow of PZT thin films is introduced. The research progress of preparation of PZT thin films by sol-gel technique is reviewed from those aspects of precursor solution, mole ratio r（Zr：Ti）, heat treatment process, electrode materials and doping modification. Some existing problems now in the research of preparation of PZT thin films by sol-gel method and the research directions in the future are predicted.

关 键 词：Pb(Zrx  Ti1–x)O3 铁电薄膜 综述 SOL-GEL法 

分 类 号：TM223[一般工业技术—材料科学与工程]