Ga/N共掺杂对InSb电子结构的影响  

The effect of Ga/N co-doping on electronic structure of InSb

作　　者：张会媛[1] 邢怀中[1] 张蕾[1] 

机构地区：[1]东华大学应用物理系,上海201620

出　　处：《红外与毫米波学报》2012年第3期231-234,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金项目(61006091;11174048)~~

摘　　要：利用基于密度泛函理论的第一性原理赝势方法,研究了Ga和N共掺杂闪锌矿InSb半导体的电子结构和电子性质.研究发现单独掺杂Ga或N对InSb带隙的影响较小.在共掺杂Ga/N的情况下,当Ga/N浓度增加时对InSb的带隙影响明显.这些理论结果对半导体材料的能带工程提供了一定的参考价值.The electronic structure and properties of zinc blende InSb co-doped with Ga and N have been investigated by means of the density functional theory based on first-principles pseudo potential calculations. It is found that single species of N or Ga doping has a small effect on the band gap of InSb. With Ga and N co-doped into InSb, its band gap is changed remarkably with the increase of co-doping level of Ga/N.

关 键 词：电子结构 Ga/N共掺杂 INSB 

分 类 号：TN304[电子电信—物理电子学]