应变Ge/Si_(1-x)Ge_x价带色散模型  

The model of valence-band dispersion for strained Ge/Si_(1_x)Ge_x

作　　者：戴显英[1] 杨程[1] 宋建军[1] 张鹤鸣[1] 郝跃[1] 郑若川[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2012年第13期387-393,共7页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:61398)资助的课题~~

摘　　要：基于k·p微扰理论,通过引入应变哈密顿量作为微扰,建立了双轴应变Ge/Si_(1-x)Ge_x价带色散关系模型.模型适于任意晶向弛豫Si_(1-x)Ge_x虚衬底上的应变Ge价带结构,通过该模型可获得任意k方向应变Ge的价带结构和空穴有效质量.模型的Matlab模拟结果显示,应变Ge/Si_(1-X)Ge_x价带带边空穴有效质量随Ge组分的增加而减小,其各向异性比弛豫Ge更加显著.本文研究成果对Si基应变Ge MOS器件及集成电路的沟道应力与晶向的设计有参考价值.Based on the k - p theory, the valence-band dispersion model for biaxial strained Ge/Sil-xGex is derived by taking strained Hamiltonian perturbation into account. The model can be used to calculate the valence band structure and hole effective mass along arbitrarily k wavevector direction in strained Ge grown on arbitrarily oriented relaxed Sil-xGex virtual substrate. The MATLAB simulation results of the model show that by comparison with relaxed Ge, the more anisotropy of the hole effective mass occurs in strained SilxGe~ and the hole effective mass of the top valence band decreases with the increase of Ge fraction. The results can supply valuable references to the conduction channel design related to stress and orientation in the Si-based strained Ge MOS devices and integrated circuits.

关 键 词：应变Ge 价带结构 k·p理论 色散关系模型 

分 类 号：TN304[电子电信—物理电子学]