Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer  

作　　者：张伟 薛军帅 周晓伟 张月 刘子阳 张进成 郝跃 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University

出　　处：《Chinese Physics B》2012年第7期455-459,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Science & Technology Special Project of China (Grant No. 2008ZX01002-002);the Major Program and State Key Program of National Natural Science Foundation of China (Grant No. 60890191)

摘　　要：An A1GaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of （102） and （002） X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the （102） rocking curves decreases, while that of the （002） rocking curves increases. A significant increase of the full width at the half maximum of the （002） rocking curves when the doping concentration reaches 2.5 × 10^19 cm-3 indicates the substantial increase of the inclined threading dislocation. High level doping in the A1GaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it.An A1GaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of （102） and （002） X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the （102） rocking curves decreases, while that of the （002） rocking curves increases. A significant increase of the full width at the half maximum of the （002） rocking curves when the doping concentration reaches 2.5 × 10^19 cm-3 indicates the substantial increase of the inclined threading dislocation. High level doping in the A1GaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it.

关 键 词：A1GAN/GAN SUPERLATTICE Si doping 

分 类 号：TN304.2[电子电信—物理电子学]