云南高校图书馆联盟文献共享服务平台- A1GAN/GAN

A1GAN/GAN: 作品数：36被引量：46H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：郝跃张进城郑鹏天秦雪雪董作典更多>>; 相关机构：西安电子科技大学北京工业大学华中科技大学专用集成电路与系统国家重点实验室更多>>; 相关期刊：《Chinese Physics Letters》《电子元器件应用》《北京工业大学学报》《半导体技术》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划国家教育部博士点基金更多>>

A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates: 《Chinese Physics B》2017年第4期420-424,共5页王辉王宁蒋苓利林新鹏赵海月于洪宇; Project supported by“Efficient and Energy-Saving GaN on Si Power Devices”Research Fund(Grant No.KQCX20140522151322946);the Research Fund of the Third Generation Semiconductor Key Laboratory of Shenzhen,China(Grant No.ZDSYS20140509142721434);the“Key Technology Research of GaN on Si Power Devices”Research Fund(Grant No.JSGG20140729145956266);the“Research of Low Cost Fabrication of GaN Power Devices and System Integration”Research Fund(Grant No.JCYJ201602261926390); A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structur...; 关键词：A1GAN/GAN high electron mobility transistor split floating gates enhancement mode

Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application: 《Journal of Semiconductors》2016年第8期49-54,共6页任春江钟世昌李宇超李忠辉孔月婵陈堂胜; Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is pre- sented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEM...; 关键词：KU-BAND PAE A1GAN/GAN GaN HEMT field plate

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor: 《Chinese Physics B》2016年第2期421-425,共5页罗俊赵胜雷宓珉瀚陈伟伟侯斌张进成马晓华郝跃; Project supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61204085); The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors（HEMTs） with L_G= 1 μm^20 μm. With the increase of L_G, VBRis first increased, and then satura...; 关键词：A1GaN/GaN high-electron-mobility transistors （HEMTs） breakdown voltage gate length

High performance AlGaN/GaN HEMTs with AlN/SiN_x passivation被引量：1: 《Journal of Semiconductors》2015年第7期94-97,共4页谭鑫吕元杰顾国栋王丽敦少博宋旭波郭红雨尹甲运蔡树军冯志红; Project supported by the National Natural Science Foundation of China(No.60890192); A1GaN/GaN high electron-mobility transistors （HEMTs） with 5 nm A1N passivation by plasma en- hanced atomic layer deposition （PEALD） were fabricated, covered by 50 nm SiNx which was grown by plasma enhanced chemica...; 关键词：A1GaN/GaN HEMTs plasma enhanced atomic layer deposition （PEALD） AIN PASSIVATION sub-threshold hysteresis thermal stability

Heterojunction DDR THz IMPATT diodes based on Al_xGa_(1-x)N/Ga N material system被引量：4: 《Journal of Semiconductors》2015年第6期39-46,共8页Suranjana Banerjee Monojit Mitra; Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN mater...; 关键词：A1GaN/GaN heterojuntion DDR IMPATTs avalanche noise terahertz frequency

大电流密度高性能AlGaN/GaN HEMT器件研制(英文): 《半导体技术》2014年第12期917-920,925,共5页王丽谭鑫吕元杰; 在SiC衬底上制备得到了表面钝化氮化硅(SiN)的AlGaN/Ga N高电子迁移率场效应晶体管(HEMTs)。采用高电子浓度的AlGaN/GaN异质结材料、90 nm T型栅、100 nm SiN表面钝化、低欧姆接触以及较短漏源间距等方法来提升器件性能。在Vgs=4 V时器...; 关键词：A1GAN/GAN HEMT SiN钝化漏源饱和电流密度电流增益截止频率 T型栅

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain被引量：1: 《Chinese Physics B》2014年第10期472-476,共5页赵胜雷宓珉瀚侯斌罗俊王毅戴杨张进成马晓华郝跃; Project supported by the National Natural Science Foundation of China(Grant Nos.61334002 and 61106106);the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206); In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages （BVs） simultaneously in A1GaN/GaN high-electron mobility transistors （HEMTs）. The mechanism of improving th...; 关键词：A1GaN/GaN high-electron mobility transistors （HEMTs） forward blocking voltage reverse blocking voltage Schottky drain

Impact of CHFa Plasma Treatment on A1GaN/GaN HEMTs Identified by Low-Temperature Measurement: 《Chinese Physics Letters》2014年第4期189-192,共4页DU Yan-Dong HAN Wei-Hua YAN Wei YANG Fu-Hua; Supported by the National Basic Research Program of China under Grant No 2010CB934104, and the National Natural Science Foundation of China under Grant No 61376069.; We investigate the impact of CHFa plasma treatment on the performance of AIGaN/GaN HEMT （F-HEMT） by a temperature-dependent measurement in the thermal range from 6 K to 295 K. Tlle temperature dependence of the tran...

Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs: 《Journal of Semiconductors》2014年第1期61-64,共4页王冲陈冲何云龙郑雪峰马晓华张进成毛维郝跃; supported by the National Natural Science Foundation of China(No.61106106);the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(No.ZHD201206);the Fundamental Research Funds for the Central Universities(Nos.K5051325004,K5051325002); The breakdown and the current collapse characteristics of high electron mobility transistors （HEMTs） with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the sa...; 关键词：high electron mobility transistors A1GAN/GAN breakdown voltage current collapse

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors: 《Chinese Physics B》2013年第11期524-527,共4页谭仁兵秦华张晓渝徐文; Project supported by the National Basic Research Program of China(Grant No.2009CB929303);the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant Nos.Y0BAQ31001 and KJCX2-EW-705);the National Natural Science Foundation of China(Grant Nos.61271157,61107093,and 10834004); We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas （2DEG） in A1GaN/GaN high electron mobility transistors （HEMTs）. By introducing a drifted Fermi-Dir...; 关键词：two-dimensional electron gas PLASMON A1GAN/GAN high electron mobility transistor

A1GAN/GAN