Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors  

作　　者：谭仁兵 秦华 张晓渝 徐文 

机构地区：[1]Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences [2]Institute of Semiconductors, Chinese Academy of Sciences [3]University of Chinese Academy of Sciences [4]Institute of Solid State Physics, Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第11期524-527,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2009CB929303);the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant Nos.Y0BAQ31001 and KJCX2-EW-705);the National Natural Science Foundation of China(Grant Nos.61271157,61107093,and 10834004)

摘　　要：We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas （2DEG） in A1GaN/GaN high electron mobility transistors （HEMTs）. By introducing a drifted Fermi-Dirac distribution, we calculate the transport properties of the 2DEG in the A1GaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi-Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation （RPA）, the electric field driven plas- mon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source-drain bias voltage besides the gate voltage （change of the electron density）.We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas （2DEG） in A1GaN/GaN high electron mobility transistors （HEMTs）. By introducing a drifted Fermi-Dirac distribution, we calculate the transport properties of the 2DEG in the A1GaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi-Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation （RPA）, the electric field driven plas- mon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source-drain bias voltage besides the gate voltage （change of the electron density）.

关 键 词：two-dimensional electron gas PLASMON A1GAN/GAN high electron mobility transistor 

分 类 号：TN32[电子电信—物理电子学]