Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs  

作　　者：王冲 陈冲 何云龙 郑雪峰 马晓华 张进成 毛维 郝跃 

机构地区：[1]Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics

出　　处：《Journal of Semiconductors》2014年第1期61-64,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61106106);the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(No.ZHD201206);the Fundamental Research Funds for the Central Universities(Nos.K5051325004,K5051325002)

摘　　要：The breakdown and the current collapse characteristics of high electron mobility transistors （HEMTs） with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly. Through analysis of the Schottky characteristics of the devices with different F-plasma treatment times, it was found that an optimal F-plasma treatment time of 120 s obviously reduced the gate reverse leakage current and improved the breakdown voltage of the devices, but longer F-plasma treatment time than 120 s did not reduce gate reverse leakage current due to plasma damage. The current collapse characteristics of the HEMTs with F-plasma treatment were evaluated by dual pulse measurement at different bias voltages and no obvious deterioration of current collapse were found after low power F-plasma treatment.The breakdown and the current collapse characteristics of high electron mobility transistors （HEMTs） with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly. Through analysis of the Schottky characteristics of the devices with different F-plasma treatment times, it was found that an optimal F-plasma treatment time of 120 s obviously reduced the gate reverse leakage current and improved the breakdown voltage of the devices, but longer F-plasma treatment time than 120 s did not reduce gate reverse leakage current due to plasma damage. The current collapse characteristics of the HEMTs with F-plasma treatment were evaluated by dual pulse measurement at different bias voltages and no obvious deterioration of current collapse were found after low power F-plasma treatment.

关 键 词：high electron mobility transistors A1GAN/GAN breakdown voltage current collapse 

分 类 号：TN32[电子电信—物理电子学]