大电流密度高性能AlGaN/GaN HEMT器件研制(英文)  

Fabrication and Characterization of High Performance Al GaN/GaN HEMTs with Large Drain Current Density

作　　者：王丽 谭鑫[2] 吕元杰[2] 

机构地区：[1]科技信息中心,北京10040 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2014年第12期917-920,925,共5页Semiconductor Technology

摘　　要：在SiC衬底上制备得到了表面钝化氮化硅(SiN)的AlGaN/Ga N高电子迁移率场效应晶体管(HEMTs)。采用高电子浓度的AlGaN/GaN异质结材料、90 nm T型栅、100 nm SiN表面钝化、低欧姆接触以及较短漏源间距等方法来提升器件性能。在Vgs=4 V时器件的最大漏源饱和电流密度为1.72 A/mm,最大跨导为305 m S/mm,此结果为国内报道的AlGaN/GaN HEMT器件最大漏源饱和电流密度。此外,栅长为90 nm T型栅器件的电流增益截止频率(fT)为109GHz,最大振荡频率(fmax)为144 GHz。A1GaN/GaN high-electron-mobility transistors （HEMTs） on SiC substrate with silicon nitride （SiN） passivation were fabricated and characterized. Several techniques were used to improved device performance such as high electron density, 90 nm T-shaped gate, 100 nm SiN passivation, low ohmic contacts and short drain- source distance. The fabricated A1GaN/GaN HEMT device exhibits a maximum drain saturation current density of 1.72 A/ram at Vs., = 4 V and a maximum peak transconductance of 305 mS/mm. The current density obtained with domestic wafer and processess is the best domestic reported to date. In addition, a unity current gain cut-off fre- quency （fr） of 109 GHz and a maximum oscillation frequency （fmax） of 144 GHz are achieved on the 90 nm T- shaped gate length device.

关 键 词：A1GAN/GAN HEMT SiN钝化 漏源饱和电流密度 电流增益截止频率 T型栅 

分 类 号：TN386[电子电信—物理电子学]