A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates  

作　　者：王辉 王宁 蒋苓利 林新鹏 赵海月 于洪宇 

机构地区：[1]Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen 518055,China 0 [2]Shenzhen Key Laborary of the Third Generation Semiconductor,Shenzhen 518055,China

出　　处：《Chinese Physics B》2017年第4期420-424,共5页中国物理B（英文版）

基　　金：Project supported by“Efficient and Energy-Saving GaN on Si Power Devices”Research Fund(Grant No.KQCX20140522151322946);the Research Fund of the Third Generation Semiconductor Key Laboratory of Shenzhen,China(Grant No.ZDSYS20140509142721434);the“Key Technology Research of GaN on Si Power Devices”Research Fund(Grant No.JSGG20140729145956266);the“Research of Low Cost Fabrication of GaN Power Devices and System Integration”Research Fund(Grant No.JCYJ201602261926390)

摘　　要：A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the V_（th） decreases with the increase of polarization sheet charge density and the tunnel dielectric（between FGs and AlGaN） thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric（between FGs and control gate） thickness.In the case of the same gate length,the V_（th） will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the V_（th） decreases with the increase of polarization sheet charge density and the tunnel dielectric（between FGs and AlGaN） thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric（between FGs and control gate） thickness.In the case of the same gate length,the V_（th） will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.

关 键 词：A1GAN/GAN high electron mobility transistor split floating gates enhancement mode 

分 类 号：TN386[电子电信—物理电子学] TN32